NX25F011B 查看數據表（PDF） - Unspecified

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NX25F011B

1M-BIT, 2M-BIT, AND 4M-BIT SERIAL FLASH MEMORIES WITH 4-PIN SPI INTERFACE

Unspecified 

NX25F011B

NX25F021B

NX25F041B

FEATURES

• Flash Storage for Resource-Limited Systems

– Ideal for portable/mobile and microcontroller-based

applications that store voice, text, and data

• 0.35µ NexFlashMemory Technology

– 1M/2M/4M-bit with 512/1024/2048 sectors

– Small 264-byte sectors

– Erase/Write time of 7.5 ms/sector (typical)

– Optional 8KB (32 sector) block erase for faster

programming

• Ultra-low Power for Battery-Operation

– Single 5V or 3V supply for read and erase/write

– 1 mA standby current, 2.5 mA active @ 3V (typical)

– Low frequency read command for lower power

• 4-pin SPI Serial Interface

– Easily interfaces to popular microcontrollers

– Clock operation as fast as 20 MHz

• On-chip Serial SRAM

– Single 264-byte Read/Write SRAM buffer

– Use in conjunction with or independent of Flash

– Off-loads RAM-limited microcontrollers

• Special Features for Media-Storage Applications

– Byte-level addressing for reads and SRAM writes

– Transfer or compare sector to SRAM

– Versatile hardware and software write-protection

– In-system electronic part number option

– Removable Serial Flash Module package option

– Serial Flash Development Kit

DESCRIPTION

The NX25F011B, NX25F021B, and NX25F041B Serial

Flash memories provide a storage solution for systems

limited in power, pins, space, hardware, and firmware

resources. They are ideal for applications that store voice,

text, and data in a portable or mobile environment. Using

NexFlash's patented single transistor EEPROM cell, the

devices offer a high-density, low-voltage, low-power, and

cost-effective non-volatile memory solution. The devices

operate on a single 5V or 3V (2.7V-3.6V) supply for Read

and Erase/Write with typical current consumption as low as

2.5 mA active and less than 1 µA standby. Sector

erase/write speeds as fast as 7.5 ms increase system

performance, minimize power-on time, and maximize

battery life.

The NX25F011B, NX25F021B, and NX25F041B provide

1M-bit, 2M-bit, and 4M-bit of flash memory organized as 512,

1024, or 2048 sectors of 264 bytes each. Each sector is

individually addressable through basic serial-clocked com-

mands. The 4-pin SPI serial interface works directly with

popular microcontrollers. Special features include: on-chip

serial SRAM, byte-level addressing, double-buffered sector

writes, transfer/compare sector to SRAM, hardware and

software write protection, alternate oscillator frequency, elec-

tronic part number, and removable Serial Flash Module

package option. Development is supported with the

PC-based SFK-SPI Serial Flash Development Kit.

4

NexFlash Technologies, Inc.

PRELIMINARY NXSF016F-1201

12/12/01 ©

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