VS-SD203N25S20PC 查看數據表（PDF） - Vishay Semiconductors
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VS-SD203N25S20PC Datasheet PDF : 10 Pages
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2.8
SD203N/R..S10 Series
2.6
TJ = 125 °C, VR = 30 V
2.4
I FM = 750 A
Square Pulse
2.2
2
400 A
1.8
200 A
1.6
10
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 10 - Recovery Time Characteristics
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
IFM = 750 A
Square Pulse
400 A
200 A
SD203N/R..S10 Series
TJ = 125 °C, VR = 30 V
20
40
60
80 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 11 - Recovery Charge Characteristics
100
I FM = 750 A
90
Square Pulse
400 A
80
70
200 A
60
50
40
30
SD203N/R..S10 Series
TJ = 125 °C, VR = 30 V
20
20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 12 - Recovery Current Characteristics
VS-SD203N/R Series
Vishay Semiconductors
3.6
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
3.2
IFM = 750 A
2.8
Square Pulse
2.4
400 A
2
200 A
1.6
10
100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 13 - Recovery Time Characteristics
170
160
I FM = 750 A
Square Pulse
150
140
130
120
400 A
110
100
200 A
90
80
70
60
50
10
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 14 - Recovery Charge Characteristics
130
120
110
100
90
80
70
60
50
40
30
20
10
10
I FM = 750 A
Square Pulse
400 A
200 A
SD203N/R..S15 Series
TJ = 125 °C, VR = 30 V
20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - diF/dt (A/μs)
Fig. 15 - Recovery Current Characteristics
Revision: 11-Jan-18
5
Document Number: 93170
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