K3325 查看數據表（PDF） - NEC => Renesas Technology

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K3325

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

NEC => Renesas Technology 

PACKAGE DRAWINGS (Unit : mm)

1)TO-220AB (MP-25)

10.6 MAX.

10.0

φ 3.6±0.2

4.8 MAX.

1.3±0.2

4

123

1.3±0.2

0.75±0.1

2.54 TYP.

2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

2SK3325

2)TO-262 (MP-25 Fin Cut)

(10)

4

4.8 MAX.

1.3±0.2

123

1.3±0.2

0.75±0.3

2.54 TYP.

0.5±0.2

2.54 TYP.

1.Gate

2.Drain

3.Source

4.Fin (Drain)

2.8±0.2

3)TO-263 (MP-25ZJ)

(10)

4

4.8 MAX.

1.3±0.2

1.4±0.2

0.7±0.2

(0.5R()0.8R)

2.54 TYP. 1 2 3 2.54 TYP.

0.5±0.2

1.Gate

2.Drain

3.Source

4.Fin (Drain)

EQUIVALENT CIRCUIT

Drain

Gate

Body

Diode

Source

Remark

Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as

much as possible, and quickly dissipate it once, when it has occurred.

Data Sheet D14264EJ1V0DS00

7

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