SN7002N(2005) 查看數據表（PDF） - Infineon Technologies

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SN7002N
(Rev.:2005)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

SN7002N

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, VGS

1

A

0.75

0.625

10V

7V

6V

5V

4.5V

4.0V

3.7V

3.5V

3.0V

0.5

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

7.5

3.1V

Ω

3.5V

3.7V

4.1V

6

4.5V

5V

5.25

6V

7V

4.5

10V

3.75

3

0.375

2.25

0.25

1.5

0.125

0.75

0

0 0.5 1 1.5 2 2.5 3 3.5 4 V 5

VDS

0

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A 1

ID

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: Tj = 25 °C

1

A

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

0.4

S

0.8

0.3

0.7

0.6

0.25

0.5

0.2

0.4

0.15

0.3

0.1

0.2

0.05

0.1

0

0 0.8 1.6 2.4 3.2 4 4.8 V 6

VGS

0

0

0.2

0.4

0.6

0.8 A 1.1

ID

Rev. 2.2

Page 5

2005-07-21

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