SN7002N(2005) 查看數據表（PDF） - Infineon Technologies
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SN7002N Datasheet PDF : 8 Pages
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9 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 0.5 A, VGS = 10 V
SN7002N
15
Ω
12
11
10
9
8
7
6
98%
5
4
3
typ
2
1
0
-60 -20
20
60 100 °C
180
Tj
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0, f=1 MHz, Tj = 25 °C
10 2
Ciss
pF
SN7002N
10 Typ. gate threshold voltage
VGS(th) = f (Tj)
parameter: VGS = VDS; ID =26µA
2.2
V
98%
1.8
1.6
typ.
1.4
1.2
1
2%
0.8
0.6
0.4
0.2
0
-60
-20
20
60
100 °C 160
Tj
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj
10 0 SN7002N
A
10 -1
10 1
Coss
10 0
0
5
Rev. 2.2
Crss
10
15
20
V
30
VDS
10 -2
10 -3
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
Page 6
2005-07-21
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