SN7002N(2005) 查看數據表（PDF） - Infineon Technologies

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SN7002N
(Rev.:2005)

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

13 Typ. gate charge

VGS = f (QG); parameter: VDS ,

ID = 0.2 A pulsed, Tj = 25 °C

SN7002N

16

V

12

10 0.2 VDS max

0.5 VDS max

8

0.8 VDS max

6

4

2

0

0 0.4 0.8 1.2 1.6 2 nC 2.8

QG

SN7002N

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

SN7002N

72

V

68

66

64

62

60

58

56

54

-60 -20

20

60 100 °C

180

Tj

Rev. 2.2

Page 7

2005-07-21

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