SN7002N 查看數據表（PDF） - Infineon Technologies

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产品描述 (功能)

生产厂家

SN7002N

SIPMOS® Small-Signal-Transistor

Infineon Technologies 

Final data

SN7002N

Thermal Characteristics

Parameter

Characteristics

Thermal resistance, junction - ambient

at minimal footprint

Symbol

Values

Unit

min. typ. max.

RthJA

-

- 350 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = VDS

V(BR)DSS 60

-

-V

VGS(th)

0.8

1.4

1.8

ID=26µA

Zero gate voltage drain current

VDS=60V, VGS=0, Tj=25°C

VDS=60V, VGS=0, Tj=150°C

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

IDSS

IGSS

µA

-

-

0.1

-

-

5

-

-

10 nA

RDS(on)

-

3.9 7.5 Ω

VGS=4.5V, ID=0.17A

Drain-source on-state resistance

RDS(on)

-

2.5

5

VGS=10V, ID=0.5A

Page 2

2003-03-26

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