HCF4069UM013TR 查看數據表（PDF） - STMicroelectronics

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HCF4069UM013TR

Hex inverter

STMicroelectronics 

HCF4069U

Hex inverter

Datasheet - production data

• ESD performance

– HBM: 1 kV

– MM: 200 V

– CDM: 1 kV

SO14

Features

• Medium-speed operation

tPD = 30 ns (typ.) at 10 V

• Standardized symmetrical output

characteristics

• Quiescent current specified up to 20 V

• 5 V, 10 V, and 15 V parametric ratings

• Input leakage current II = 100 nA (max.) at

VDD = 18 V and TA = 25 ° C

• 100 % tested for quiescent current

Applications

• Automotive

• Industrial

• Computer

• Consumer

Description

The HCF4069U is a monolithic integrated circuit

fabricated in metal oxide semiconductor

technology available in the SO14 package. The

HCF4069U consists of six COS/MOS inverter

circuits. This device is intended for all general

purpose inverter applications where the medium

power TTL-drive and logic level conversion

capabilities of circuits such as HCF4049 hex

inverter/buffers are not required.

Table 1. Device summary table

Order code

Temperature range

Package

Packing

Marking

HCF4069UM013TR

-55 ° C to +125 ° C

HCF4069YUM013TR (1) -40 ° C to +125 ° C

SO14

SO14

(automotive grade)(1)

Tape and reel

HCF4069U

HCF4069Y

1. Qualification and characterization according to AEC Q100 and Q003 or equivalent, advanced screening according to AEC

Q001 & Q002 or equivalent.

January 2014

This is information on a product in full production.

DocID2060 Rev 6

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