ST173C12CFP3 查看數據表（PDF） - Vishay Semiconductors
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ST173C12CFP3 Datasheet PDF : 11 Pages
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4500
4000
3500
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
3000
2500
ST173C..C Series
2000
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
5000
4500
4000
3500
Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.
Initial TJ = 125 °C
No voltage reapplied
Rated VRRM reapplied
3000
2500
2000 ST173C..C Series
1500
0.01
0.1
1
Pulse Train Duration (s)
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10 000
ST173C..C Series
1000
TJ = 25 °C
TJ = 125 °C
100
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
Instantaneous On-State Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
VS-ST173C Series
Vishay Semiconductors
1
ST173C..C Series
0.1
0.01
Steady state value
RthJ-hs = 0.17 K/W
(Single side cooled)
RthJ-hs = 0.08 K/W
(Double side cooled)
(DC operation)
0.001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 10 - Thermal Impedance ZthJ-hs Characteristics
250
ST173C..C Series
200 TJ = 125 °C
150
100
ITM = 500 A
ITM = 300 A
ITM = 200 A
ITM = 100 A
50
ITM = 50 A
0
0
20
40
60
80
100
dI/dt - Rate of Fall of On-State Current (A/µs)
Fig. 11 - Reverse Recovered Charge Characteristics
160
140
ITM = 500 A
ITM = 300 A
120
ITM = 200 A
100
ITM = 100 A
80
ITM = 50 A
60
40
ST173C..C Series
20
TJ = 125 °C
0
0
20
40
60
80
100
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Reverse Recovered Current Characteristics
Revision: 12-Sep-17
5
Document Number: 94366
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