ST173S12MDJ1 查看數據表（PDF） - Vishay Semiconductors

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ST173S12MDJ1

Inverter Grade Thyristors (Stud Version), 175 A

Vishay Semiconductors 

ST173SPbF Series

Inverter Grade Thyristors Vishay High Power Products

(Stud Version), 175 A

BLOCKING

PARAMETER

SYMBOL

Maximum critical rate of rise of off-state voltage

dV/dt

Maximum peak reverse and off-state leakage current

IRRM,

IDRM

TEST CONDITIONS

TJ = TJ maximum, linear to 80 % VDRM,

higher value available on request

TJ = TJ maximum, rated VDRM/VRRM applied

VALUES

500

40

UNITS

V/µs

mA

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak positive gate voltage

Maximum peak negative gate voltage

Maximum DC gate currrent required to trigger

Maximum DC gate voltage required to trigger

Maximum DC gate current not to trigger

Maximum DC gate voltage not to trigger

SYMBOL

PGM

PG(AV)

IGM

+ VGM

- VGM

IGT

VGT

IGD

VGD

TEST CONDITIONS

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated VDRM applied

VALUES

60

10

10

20

5

200

3

20

0.25

UNITS

W

A

V

mA

V

mA

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum junction operating temperature range

TJ

Maximum storage temperature range

TStg

Maximum thermal resistance, junction to case

RthJC

DC operation

Maximum thermal resistance, case to heatsink

RthCS Mounting surface, smooth, flat and greased

Mounting torque, ± 10 %

Non-lubricated threads

Lubricated threads

Approximate weight

Case style

See dimensions - link at the end of datasheet

VALUES UNITS

- 40 to 125

°C

- 40 to 150

0.105

K/W

0.04

31

(275)

24.5

(210)

N·m

(lbf · in)

280

g

TO-209AB (TO-93)

ΔRthJC CONDUCTION

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS

180°

0.016

0.012

120°

0.019

0.020

90°

0.025

0.027

TJ = TJ maximum

60°

0.036

0.037

30°

0.060

0.060

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

UNITS

K/W

Document Number: 94367

Revision: 29-Apr-08

For technical questions, contact: ind-modules@vishay.com

www.vishay.com

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