ST180S20P0 查看數據表（PDF） - Vishay Semiconductors

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ST180S20P0

Phase Control Thyristors (Stud Version), 200 A

Vishay Semiconductors 

www.vishay.com

VS-ST180SPbF Series

Vishay Semiconductors

TRIGGERING

PARAMETER

Maximum peak gate power

Maximum average gate power

Maximum peak positive gate current

Maximum peak positive gate voltage

Maximum peak negative gate voltage

DC gate current required to trigger

DC gate voltage required to trigger

DC gate current not to trigger

DC gate voltage not to trigger

SYMBOL

TEST CONDITIONS

PGM

PG(AV)

IGM

+ VGM

- VGM

IGT

VGT

IGD

VGD

TJ = TJ maximum, tp  5 ms

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp  5 ms

TJ = TJ maximum, tp  5 ms

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

TJ = - 40 °C

TJ = 25 °C

TJ = 125 °C

TJ = TJ maximum

Maximum required gate trigger/

current/voltage are the lowest

value which will trigger all units

12 V anode to cathode applied

Maximum gate current/voltage

not to trigger is the maximum

value which will not trigger any

unit with rated VDRM anode to

cathode applied

VALUES

TYP. MAX.

10

2.0

3.0

20

5.0

180

-

90

150

40

-

2.9

-

1.8

3.0

1.2

-

10

UNITS

W

A

V

mA

V

mA

0.25

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

Maximum operating junction

temperature range

TJ

Maximum storage temperature range

Maximum thermal resistance,

junction to case

TStg

RthJC

DC operation

Maximum thermal resistance,

case to heatsink

RthC-hs Mounting surface, smooth, flat and greased

Mounting torque, ± 10 %

Non-lubricated threads

Lubricated threads

Approximate weight

Case style

See dimensions - link at the end of datasheeet

VALUES

UNITS

-40 to +125

°C

-40 to +150

0.105

K/W

0.04

31

(275)

24.5

(210)

N·m

(lbf in)

280

g

TO-93 (TO-209AB)

RthJC CONDUCTION

CONDUCTION ANGLE

180°

120°

90°

60°

30°

SINUSOIDAL

CONDUCTION

0.015

0.019

0.025

0.036

0.060

RECTANGULAR

CONDUCTION

0.012

0.020

0.027

0.037

0.060

TEST CONDITIONS

UNITS

TJ = TJ maximum

K/W

Note

• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC

Revision: 27-Sep-17

3

Document Number: 94397

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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