TIP41CN 查看數據表（PDF） - STMicroelectronics
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TIP41CN Datasheet PDF : 8 Pages
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TIP41CN / TIP42CN
Symbol
Parameter
Value
Unit
NPN
TIP41CN
IB
Base Current
Ptot
Total Dissipation at TC ≤ 25 oC
Tstg Storage Temperature
TJ
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
PNP
TIP42CN
3
A
65
W
-65 to 150
°C
150
°C
Table 3: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICEO
IEBO
ICES
VCEO(sus)*
Collector Cut-off Current VCE = 60 V
(IB = 0)
Emitter Cut-off Current VEB = 5 V
(IC = 0)
Collector Cut-off Current VCE = 100 V
(VBE = 0)
Collector-Emitter
Sustaining Voltage
IC = 30 mA
0.7 mA
1
mA
0.4 mA
100
V
(IB = 0 )
VCE(sat)* Collector-Emitter
Saturation Voltage
IC = 6 A
IB = 0.6 A
1.5
V
VBE(on)* Base-Emitter Voltage IC = 6 A
VCE = 4 V
2
V
hFE* DC Current Gain
IC = 0.3 A
VCE = 4 V
30
IC = 3 A
VCE = 4 V
Group R
15
28
Group O
24
44
Group Y
42
75
* Pulsed: Pulsed duration = 300 ms, duty cycle ≤ 2 %.
For PNP types voltage and current values are negative.
# Note: Product is pre-selected in DC current gain (Group R, Group O and Group Y). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicrolectronics sales office for delivery details.
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