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L5150GJ 查看數據表(PDF) - STMicroelectronics

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L5150GJ
ST-Microelectronics
STMicroelectronics ST-Microelectronics
L5150GJ Datasheet PDF : 29 Pages
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L5150GJ
Electrical specifications
Table 5. General (continued)
Pin Symbol
Parameter
Test condition
Min. Typ. Max. Unit
Tw
Thermal protection
temperature
Tw_hy
Thermal protection
temperature hysteresis
150
190 °C
10
°C
1. Measured output current when the output voltage has dropped 100 mV from its nominal value obtained at
13.5 V and Io = 75 mA.
2. Vs - Vo measured dropout when the output voltage has dropped 100 mV from its nominal value obtained at
13.5 V and Io = 75 mA.
3. Guaranteed by design.
Table 6.
Pin
Res
Res
Res
Res
Res_adj
Res_adj
Res_adj
Vcr
Vcr
Vcr
Vcr
Res
Res
Reset
Symbol
Parameter
Test condition
Vres_l
IRes_lkg
Reset output low
voltage
Reset output high
leakage current
Rext = 5 kW,
Vo > 1 V
VRes = 5 V
RRes
Pull up internal
resistance
Versus Vo
Vo_th
VRes_adj
Vo out of regulation
threshold
Reset adjustable
switching threshold
VRes_adj < 0.2 V,
Vo decreasing
VRes_adjl
Reset adjustable low
voltage
IRes_adj_lkg
Reset adjustable
leakage current
VRes_adj = 2.5 V
VRlth
Reset timing low
threshold
VS = 13.5 V
VRhth
Reset timing high
threshold
VS = 13.5 V
Icr
Charge current
VS = 13.5 V
Idr
Discharge current VS = 13.5 V
Trr
Reset reaction time
Trd
Reset delay time
VS = 13.5 V,
Ctr = 1000 pF
Min.
10
6
2.35
0.4
-1
15
47
10
10
2
Typ. Max. Unit
0.4
V
1
µA
20 40
kΩ
% Below
8
10
Vo_ref
2.5 2.65
V
0.9 1.3
V
1
µA
18
22 % Vo_ref
50
53 % Vo_ref
20 30
µA
20 30
µA
2
µs
4
11
ms
Doc ID 15540 Rev. 12
9/29

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