2SD2654(2013) 查看數據表（PDF） - ROHM Semiconductor
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2SD2654 Datasheet PDF : 12 Pages
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2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
2SD2226K,2SD2351
2SD2351,2SD2707
Junction temperature
Range of storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP *1
PD *2
Tj
Tstg
Data Sheet
Values
Unit
60
V
50
V
12
V
150
mA
200
mA
200
mW
150
mW
150
°C
-55 to +150
°C
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Collector-emitter
breakdown voltage
Collector-base
breakdown voltage
Emitter-base
breakdown voltage
BVCEO
BVCBO
BVEBO
Conditions
IC = 1mA
IC = 10mA
IE = 10mA
Collector cut-off current
ICBO VCB = 50V
Emitter cut-off current
IEBO VEB = 12V
Collector-emitter
saturation voltage
VCE(sat) IC = 50mA, IB = 5mA
DC current gain
hFE VCE = 5V, IC = 1mA
Transition frequency
fT
VCE = 5V, IE = -10mA
f=100MHZ
Output capacitance
Cob
VCB = 5V, IE = 0mA
f = 1MHz
*1 PW=10ms Single pulse.
*2 Each terminal mounted on a reference footprint
lhFE rank categories
Rank
V
hFE
820 to 1800
W
1200 to 2700
Min. Typ. Max. Unit
50
-
-
V
60
-
-
V
12
-
-
V
-
-
0.3
mA
-
-
0.3
mA
-
-
0.3
V
820
-
2700
-
-
250
-
MHz
-
3.5
-
pF
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2/10
2013.05 - Rev.B
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