STP14NM50N(2014) 查看數據表（PDF） - STMicroelectronics

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STP14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

STF14NM50N, STI14NM50N, STP14NM50N

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

I²PAK, TO-220

Unit

TO-220FP

VDS

VGS

ID

ID

IDM (2)

PTOT

dv/dt (3)

Drain-source voltage

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Peak diode recovery voltage slope

500

± 25

12

8

48

90

15

12 (1)

8 (1)

48 (1)

25

V

V

A

A

A

W

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

V

Tstg Storage temperature

Tj Max. operating junction temperature

- 55 to 150

°C

150

°C

1. Limited by maximum junction temperature

2. Pulse width limited by safe operating area

3. ISD ≤ 12 A, di/dt ≤ 400 A/s,VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS

Symbol

Table 3. Thermal data

Parameter

Value

Unit

TO-220FP I²PAK TO-220

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-ambient max

5

1.39

62.5

°C/W

°C/W

Table 4. Avalanche data

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

4

A

EAS

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50 V)

172

mJ

DocID16832 Rev 7

3/18

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