STP14NM50N(2014) 查看數據表（PDF） - STMicroelectronics

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STP14NM50N
(Rev.:2014)

N-channel 500 V, 0.28 Ω typ., 12 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK and TO-220 packages

STMicroelectronics 

Electrical characteristics

Figure 14. Source-drain diode forward

characteristics

VSD

(V)

1.4

1.2

TJ= -50 °C

AM15616v1

1

TJ= 25 °C

0.8

TJ= 150 °C

0.6

0.4

0.2

0

0 1 2 3 4 5 6 7 8 9 10 11 ISD(A)

STF14NM50N, STI14NM50N, STP14NM50N

8/18

DocID16832 Rev 7

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