VS-MBRD330TRRPBF 查看數據表（PDF） - Vishay Semiconductors
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VS-MBRD330TRRPBF Datasheet PDF : 8 Pages
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VS-MBRD320PbF, VS-MBRD330PbF, VS-MBRD340PbF
Vishay Semiconductors
Schottky Rectifier, 3.0 A
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of change
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
3A
TJ = 25 °C
6A
3A
TJ = 125 °C
6A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
TYP.
0.48
0.58
0.41
0.55
0.02
10.7
189
5.0
-
MAX.
0.6
0.7
0.49
0.625
0.2
20
-
-
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
TJ (1)
TStg
RthJC
DC operation
See fig. 4
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
Approximate weight
Marking device
Case style D-PAK (similar to TO-252AA)
Note
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
VALUES
- 40 to 150
- 40 to 175
UNITS
°C
6.0
°C/W
80
0.3
g
0.01
oz.
MBRD320
MBRD330
MBRD340
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94313
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 14-Jan-11
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