STPS40M100C 查看數據表（PDF） - STMicroelectronics
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STPS40M100C Datasheet PDF : 12 Pages
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STPS40M100C
Characteristics
1
Characteristics
Table 1. Absolute Ratings (limiting values, per diode, at 25 °C, unless otherwise specified)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) Forward rms current
IF(AV) Average forward current, δ = 0.5
TC = 130 °C
TC = 120 °C
Per diode
Per device
IFSM
Surge non repetitive forward current
tp = 10 ms sinusoidal
PARM Repetitive peak avalanche power
tp = 10 µs , Tj = 125 °C
Tstg
Storage temperature range
Tj
Maximum operating junction temperature(1)
1. (dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.
Value
Unit
100
V
60
A
20
A
40
400
A
1668
W
-65 to +175
°C
150
°C
Symbol
Rth(j-c)
Rth(c)
Table 2. Thermal resistance parameters
Junction to case
Coupling
Parameter
Per diode
Total
Value
1.40
0.95
0.50
Unit
°C/W
When the diodes 1 and 2 are used simultaneously:
ΔTj (diode1) = P(diode1) x Rth(j-c) (per diode) + P(diode2) x Rth(c)
For more information, please refer to the following application note :
• AN5088 : Rectifiers thermal management, handling and mounting recommendations
Table 3. Static electrical characteristics (per diode)
Symbol
Parameter
IR (1)
Reverse leakage current
VF (2)
Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
Test conditions
Tj = 25 °C
Tj = 125 °C
VR = VRRM
Tj = 25 °C
Tj = 125 °C
VR = 70 V
Tj = 125 °C
IF = 5 A
Tj = 125 °C
IF = 10 A
Tj = 25 °C
Tj = 125 °C
IF = 20 A
Min. Typ.
Max. Unit
-
70
µA
-
15
70
mA
40
µA
7.5
40
mA
-
0.415 0.500
-
0.500 0.560
V
-
0.780
-
0.585 0.640
To evaluate the conduction losses, use the following equation: P = 0.560 x IF(AV) + 0.004 x IF 2 (RMS)
DS6170 - Rev 4
page 2/12
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