STPS40M120CT 查看數據表（PDF） - STMicroelectronics

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STPS40M120CT

Power Schottky rectifier

STMicroelectronics 

Characteristics

1

Characteristics

STPS40M120C

Table 2.

Absolute ratings (limiting values per diode at Tamb = 25 °C, unless

otherwise specified)

Symbol

Parameter

Value Unit

VRRM Repetitive peak reverse voltage

120

V

IF(RMS) Forward rms current

30

A

IF(AV) Average forward current, δ = 0.5

Per diode Tc = 130 °C

20

A

Per device Tc = 120 °C

40

IFSM Surge non repetitive forward current

PARM(1) Repetitive peak avalanche power

tp = 10 ms sinusoidal

Tj = 125 °C, tp = 10 µs

220

A

1600

W

VARM(2)

Maximum repetitive peak

avalanche voltage

tp < 10 µs, Tj < 125 °C, IAR < 10.7 A

150

V

VASM(2)

Maximum single-pulse

peak avalanche voltage

tp < 10 µs, Tj < 125 °C, IAR < 10.7 A

150

V

Tstg Storage temperature range

Tj Maximum operating junction temperature(3)

-65 to +175 °C

150

°C

1. For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

2. See Figure 9

3. dPtot < 1 condition to avoid thermal runaway for a diode on its own heatsink

dTj Rth(j-a)

Table 3. Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c) Junction to case

Rth(c) Coupling

Per diode

Total

1.10

0.80

°C/W

0.50

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

2/9

Doc ID 022916 Rev 1

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