STPS40M60CTN 查看數據表（PDF） - STMicroelectronics
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STPS40M60CTN Datasheet PDF : 10 Pages
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STPS40M60C
Characteristics
Table 4. Static electrical characteristics (per diode)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
IR(1) Reverse leakage current
VF(2) Forward voltage drop
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: tp = 380 µs, δ < 2 %
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
VR = 60 V
IF = 5A
IF = 10 A
IF = 20 A
IF = 40 A
-
25
110
µA
-
85
mA
-
0.430 0.460
-
0.325 0.355
-
0.470 0.505
-
0.385 0.435
V
-
0.540 0.595
-
0.475 0.535
-
0.645 0.730
-
0.605 0.675
To evaluate the conduction losses use the following equation:
P = 0.395 x IF(AV) + 0.007 x IF2(RMS)
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
PF(AV)(W)
16
T
14
12
δ=tp/T
tp
δ=0.5
δ=1
IF(AV)(A)
24
22
20
δ=0.2
18
Rth(j-a)=Rth(j-c)
δ=0.1
16
10
δ=0.05
14
8
12
10
6
8
4
6
4
2
IF(AV)(A)
2
0
0
0 2 4 6 8 10 12 14 16 18 20 22 24 26
0
Tamb(°C)
25
50
75
100
125
150
Doc ID 018813 Rev 1
3/10
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