STPS40SM100CT 查看數據表（PDF） - STMicroelectronics
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STPS40SM100CT Datasheet PDF : 9 Pages
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STPS40SM100C
Characteristics
Figure 2.
Average forward power dissipation Figure 3.
versus average forward current
(per diode)
Average forward current versus
ambient temperature (δ = 0.5, per
diode)
PF(av)(W)
18
16
δ=0.05
δ=0.1
δ=0.2
δ=0.5 δ=1
14
12
10
8
6
4
T
2
IF(av)(A)
δ=tp/T
tp
0
0 2 4 6 8 10 12 14 16 18 20 22 24
IF(av)(A)
22
20
Rth(j-a)=Rth(j-c)
18
16
14
12
10
Rth(j-a)=15 °C/W
8
6
T
4
2
δ=tp/T
tp
Tamb(°C)
0
0
25
50
75
100
125
150
Figure 4. Normalized avalanche power
derating versus pulse duration
Figure 5.
Normalized avalanche power
derating versus junction
temperature
P ARM(t p)
P ARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
t p(µs)
1
10
PARM(Tj)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
100
1000
25
50
Tj(°C)
75
100
125
150
Figure 6.
IM(A)
350
300
250
200
150
100
IM
50
0
1.E-03
Non repetitive surge peak forward Figure 7.
current versus overload duration,
maximum values, per diode
Relative variation of thermal
impedance junction to case
versus pulse duration
t
δ =0.5
1.E-02
t(s)
1.E-01
Tc=25 °C
Tc=75 °C
Tc=125 °C
1.E+00
Zth(j-c)/Rth(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3 Single pulse
0.2
0.1
0.0
1.E-03
1.E-02
T
tp(s)
δ=tp/T
1.E-01
tp
1.E+00
Doc ID 15525 Rev 2
3/9
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