STPS40SM100CT 查看數據表（PDF） - STMicroelectronics
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STPS40SM100CT Datasheet PDF : 9 Pages
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Characteristics
STPS40SM100C
Figure 8.
Reverse leakage current versus
reverse voltage applied (typical
values, per diode)
IR(mA)
1.E+02
Tj=150 °C
1.E+01
Tj=125 °C
1.E+00
1.E-01
Tj=100 °C
Tj=75 °C
Tj=50 °C
1.E-02
1.E-03
0
Tj=25 °C
VR(V)
10 20 30 40 50 60 70 80 90 100
Figure 9.
Junction capacitance versus
reverse voltage applied
(typical values, per diode)
C(pF)
10000
F=1 MHz
Vosc=30 mVRMS
Tj=25 °C
1000
VR(V)
100
1
10
100
Figure 10. Forward voltage drop versus
forward current (per diode)
IFM(A)
40
35
Tj=125 °C
Maximum values
30
25
20
Tj=125 °C
Typical values
15
10
5
0
0.00
0.10
0.20
0.30
0.40
0.50
0.60
Tj=25 °C
Maximum values
VFM(V)
0.70 0.80 0.90 1.00
Figure 11. Reverse safe operating area
(tp < 1 µs and Tj < 150 °C)
Iarm (A)
55
53
51
49
47
45
43
41
Operating area
39
37
35
Forbidden area
Varm (V)
100
110
120
130
140
150
Varm (V)
4/9
Doc ID 15525 Rev 2
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