STPS40SM120CR 查看數據表（PDF） - STMicroelectronics

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STPS40SM120CR

Power Schottky rectifier

STMicroelectronics 

Characteristics

STPS40SM120C

Figure 6.

Reverse leakage current versus

reverse voltage applied

(typical values, per diode)

1.E+02 IR(mA)

1.E+01

Tj=150°C

Tj=125°C

Figure 7.

C(pF)

10000

Junction capacitance versus

reverse voltage applied

(typical values, per diode)

F=1MHz

Vosc =30mVRMS

Tj=25°C

1.E+00

1.E-01

Tj=100°C

Tj=75°C

Tj=50°C

1000

1.E-02

Tj=25°C

1.E-03

VR(V)

0 10 20 30 40 50 60 70 80 90 100 110 120

100

1

VR(V)

10

100

1000

Figure 8. Forward voltage drop versus

forward current (per diode)

Figure 9. Reverse safe operating area

(tp < 10 µs and Tj < 125 °C)

1000.0 IFM(A)

10.0 Iarm (A)

100.0

Tj=125°C

(Maximum values)

9.5

9.0

10.0

Tj=125°C

(Typical values)

Tj=25°C

(Maximum values)

8.5

8.0

7.5

1.0

0.1

VFM(V)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

7.0

6.5

120

130

140

Varm (V)

150

160

170

4/9

Doc ID 022917 Rev 1

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