STU4N52K3(2018) 查看數據表（PDF） - STMicroelectronics
零件编号
产品描述 (功能)
生产厂家
STU4N52K3
(Rev.:2018)
(Rev.:2018)
STMicroelectronics
STU4N52K3 Datasheet PDF : 27 Pages
| |||
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics
2
Electrical characteristics
(TCASE = 25 °C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0 V
IDSS
IGSS
Zero gate voltage drain
current
Gate body leakage
current
VGS = 0 V, VDS = 525 V
VGS = 0 V, VDS = 525 V, TC = 125 °C (1)
VDS = 0 V, VGS = ±20 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on
resistance
VDS = VGS, ID = 50 µA
VGS = 10 V, ID = 1.25 A
1. Defined by design, not subject to production test.
Min. Typ. Max. Unit
525
V
1
µA
50
µA
±10
µA
3
3.75
4.5
V
2.1
2.6
Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Ciss
Input capacitance
334
Coss
Crss
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz, VGS = 0 V
-
28
-
pF
5
Coss eq. (1)
Equivalent output
capacitance
VDS = 0 to 420 V, VGS = 0 V
-
20
-
pF
RG
Intrinsic gate resistance f = 1 MHz open drain
-
4
-
Ω
Qg
Total gate charge
VDD = 420 V, ID = 2.5 A, VGS = 0 to 10 V
11
Qgs
Gate-source charge
(see Figure 16. Test circuit for gate charge
-
2
-
nC
behavior)
Qgd
Gate-drain charge
7
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 420 V.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 6. Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 260 V, ID = 1.25 A,
8
RG = 4.7 Ω, VGS = 10 V
7
(see Figure 15. Test circuit for resistive load
-
21
-
ns
switching times and Figure 20. Switching
time waveform)
14
DS7026 - Rev 3
page 3/27
Share Link: