Figure 7. Normalized V(BR)DSS vs temperature
V(BR)DSS
(norm)
AM08648v1
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-75
-25
25
75
125
TJ (°C )
Figure 9. Gate charge vs gate-source voltage
VGS
(V)
12 VDS
10
8
6
4
2
0
02
VDD=420V
ID =2.5A
AM08642v1 VDS
(V)
400
350
300
250
200
150
100
50
0
4 6 8 10 12 Qg(nC)
Figure 11. Normalized gate threshold voltage vs
temperature
VGS (th)
(norm)
AM08646v1
1.1
ID = 50 μΑ
1.0
0.9
0.8
0.7
0.6
0.5
-75 -25
25
75 125
TJ (°C )
STD4N52K3, STP4N52K3, STU4N52K3
Electrical characteristics curves
Figure 8. Static drain-source on-resistance
RDS (on)
(Ω)
2.35
VG S =1 0 V
AM08643v1
2.25
2.15
2.05
1.95
1.85
1.75
0
0.5 1.0 1.5 2.0 2.5
ID(A)
Figure 10. Capacitance variations
C
(pF)
AM00893v1
Cis s
100
10
1
0.1
1
Coss
Crs s
10
100 VDS(V)
Figure 12. Normalized on-resistance vs temperature
RDS (on)
(norm)
AM08647v1
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
0
-75 -25
25
75
125 TJ(°C)
DS7026 - Rev 3
page 6/27