Electrical characteristics
STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5
2
Electrical characteristics
(Tcase =25 °C unless otherwise specified)
Symbol
Parameter
Table 4. On /off states
Test conditions
Drain-source
V(BR)DSS breakdown voltage
ID = 1 mA, VGS = 0
IDSS
IGSS
VGS(th)
RDS(on)
Zero gate voltage
VDS = 800 V
drain current (VGS = 0) VDS = 800 V, TC=125 °C
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
Gate threshold voltage VDS = VGS, ID = 100 μA
Static drain-source on-
resistance
VGS = 10 V, ID = 1.5 A
Min. Typ. Max. Unit
800
V
1 μA
50 μA
±10 μA
3
4
5V
2.1 2.5 Ω
Symbol
Parameter
Table 5. Dynamic
Test conditions
Min. Typ. Max. Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 100 V, f = 1 MHz,
VGS = 0
- 175 - pF
-
20
- pF
-
1
- pF
(1)
Co(tr)
Equivalent
capacitance time
related
VDS = 0 to 640 V, VGS = 0
-
26
- pF
Equivalent
(2)
Co(er) capacitance energy
related
VDS = 0 to 640 V, VGS = 0
Rg Gate input resistance f=1 MHz, ID = 0
-
11
- pF
-
15
-
Ω
Qg Total gate charge
VDD = 640 V, ID = 3 A,
Qgs Gate-source charge VGS = 10 V
Qgd Gate-drain charge
(see Figure 19)
- 10.5 - nC
-
2
- nC
-
7.5
- nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when
VDS increases from 0 to 80% VDSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss
when VDS increases from 0 to 80% VDSS
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DocID025105 Rev 2