STP4N80K5(2013) 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STP4N80K5
(Rev.:2013)

N-channel 800 V, 2.1 Ω typ., 3 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

Electrical characteristics

Symbol

Table 6. Switching times

Parameter

Test conditions

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 400 V, ID = 1.5 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 18)

Min. Typ. Max. Unit

- 16.5 - ns

- 15 - ns

- 36 - ns

- 21 - ns

Symbol

Table 7. Source drain diode

Parameter

Test conditions

ISD

(1)

ISDM

(2)

VSD

Source-drain current

Source-drain current (pulsed)

Forward on voltage

ISD = 3 A, VGS = 0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 3 A, di/dt = 100 A/μs

VDD= 60 V TJ = 25 °C

(see Figure 20)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 3 A, di/dt = 100 A/μs

VDD= 60 V TJ = 150 °C

(see Figure 20)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%

Min. Typ. Max. Unit

-

3A

12 A

-

1.5 V

- 242

ns

- 1.42

μC

- 12

A

- 373

ns

- 1.98

μC

- 10.5

A

Symbol

Table 8. Gate-source Zener diode

Parameter

Test conditions

Gate-source breakdown

V(BR)GSO voltage

IGS= ± 1 mA, ID=0

Min. Typ. Max. Unit

30

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

DocID025105 Rev 2

5/23

23

Share Link: