STP4N80K5 查看數據表（PDF） - STMicroelectronics

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STP4N80K5

N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD4N80K5, STF4N80K5, STP4N80K5, STU4N80K5

2

Electrical characteristics

(Tcase =25 °C unless otherwise specified)

Symbol

Parameter

Table 4. On /off states

Test conditions

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

IDSS

IGSS

VGS(th)

RDS(on)

Zero gate voltage

VDS = 800 V

drain current (VGS = 0) VDS = 800 V, TC=125 °C

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

Gate threshold voltage VDS = VGS, ID = 100 µA

Static drain-source on-

resistance

VGS = 10 V, ID = 1.5 A

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

2.1 2.5 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 100 V, f = 1 MHz,

VGS = 0

-

175

- pF

-

18

- pF

-

0.5

- pF

Co(tr)(1)

Equivalent

capacitance time

related

VDS = 0 to 640 V, VGS = 0

-

26

- pF

Co(er)(2)

Equivalent

capacitance energy

related

VDS = 0 to 640 V, VGS = 0

-

11

- pF

Rg

Gate input resistance f=1 MHz, ID = 0

-

15

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 3 A,

Qgs Gate-source charge VGS = 10 V

Qgd Gate-drain charge

(see Figure 19)

-

10.5

- nC

-

2

- nC

-

7.5

- nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/23

DocID025105 Rev 3

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