STZ6.2NT146 查看數據表（PDF） - ROHM Semiconductor
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STZ6.2NT146 Datasheet PDF : 5 Pages
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STZ6.2N
Data Sheet
10
1
0.1
0.01
0.001
5
6.5
6.4
6.3
6.2
6.1
6
1000
Ta=25℃
Ta=-25℃
100
Ta=75℃
10
Ta=125℃
1
Ta=150℃
0.1
0.01
0.001
5.5
6
6.5
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
0.0001
7
0
Ta=150℃
Ta=125℃
Ta=75℃
Ta=25℃
Ta=-25℃
0.5 1 1.5 2 2.5 3
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
1
Ta=25℃
0.9
IZ=5mA
0.8
n=30pcs
0.7
0.6
0.5
0.4
0.3
0.2
AVE:6.245V
0.1
0
Vz DISRESION MAP
Ta=25℃
VR=3.0V
n=30pcs
AVE:0.138nA
IR DISRESION MAP
100
f=1MHz
10
1
0
1
2
3
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
30
29
Ta=25℃
28
f=1MHz
VR=0V
27
n=10pcs
26
25
24
23
AVE:21.59pF
22
21
20
Ct DISRESION MAP
100
10
1
0.1
1000
Rth(j-a)
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS
100
Rth(j-c)
Mounted on epoxy board
10
IM=10mA
IF=100mA
1ms time
300us
1
10
0.001 0.01 0.1 1 10 100 1000
TIME:t(s)
Rth-t CHARACTERISTICS
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2/2
2011.03 - Rev.B
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