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ACST6 查看數據表(PDF) - STMicroelectronics

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ACST6
ST-Microelectronics
STMicroelectronics ST-Microelectronics
ACST6 Datasheet PDF : 20 Pages
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ACST6
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VTM(1)
VT0(1)
Rd(1)
IOUT = 2.1 A, tp = 500 µs
IOUT = 8.5 A, tp = 500 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VOUT = VDRM/ VRRM
1. For both polarities of OUT pin referenced to COM pin
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MAX.
MAX.
MAX.
Value
Unit
1.4
V
1.7
0.9
V
80
mΩ
20
µA
500
µA
Symbol
Table 5. Thermal resistances
Parameter
Junction to ambient
Rth(j-a)
Junction to ambient (soldered on 1 cm2 copper pad)
Rth(j-c) Junction to case for full cycle sine wave conduction
TO-220AB
TO-220FPAB
I2PAK
D2PAK
TO-220FPAB
TO-220AB
D2PAK , I2PAK
Value
60
65
45
4.25
2.5
Unit
°C/W
°C/W
Figure 2. Maximum power dissipation versus
RMS on-state current
P(W)
8
α = 180°
180°
7
6
5
4
3
2
1
IT(RMS)(A)
0
0
1
2
3
4
5
6
Figure 3. On-state RMS current versus case
temperature (full cycle)
IT(RMS)(A)
7
6
5
4
3
2
1
0
0
25
TO-220FPAB
α = 180°
TO-220AB
D²PAK
I²PAK
TC(°C)
50
75
100
125
DocID7297 Rev 11
3/20
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