PHPT61003PYX 查看數據表（PDF） - NXP Semiconductors.

零件编号

产品描述 (功能)

生产厂家

PHPT61003PYX

100 V, 3A PNP high power bipolar transistor

NXP Semiconductors. 

NXP Semiconductors

PHPT61003PY

100 V, 3A PNP high power bipolar transistor

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

VCBO

collector-base voltage

open emitter

VCEO

collector-emitter voltage

open base

VEBO

emitter-base voltage

open collector

IC

collector current

ICM

peak collector current

tp ≤ 1 ms; single pulse

IB

base current

Ptot

total power dissipation

Tamb ≤ 25 °C

Tj

Tamb

Tstg

junction temperature

ambient temperature

storage temperature

Min Max Unit

-

-100 V

-

-100 V

-

-8

V

-

-3

A

-

-8

A

-

-0.5 A

[1]

-

1.25 W

[2]

-

3

W

[3]

-

5

W

[4]

-

25

W

-

175 °C

-55 175 °C

-65 175 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB; single-sided copper; tin-plated mounting pad for collector 6 cm2.

[3] Device mounted on an ceramic PCB; Al2O3; standard footprint.

[4] Power dissipation from junction to mounting base.

8

Ptot

(W)

6

aaa-010424

(1)

4

(2)

2

(3)

0

-75

25

Fig. 1.

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 6 cm2

(3) FR4 PCB, standard footprint

Power derating curves

125

225

Tamb (°C)

PHPT61003PY

Product data sheet

All information provided in this document is subject to legal disclaimers.

13 January 2014

© NXP N.V. 2014. All rights reserved

3 / 15

Share Link: