2SC1162 查看數據表（PDF） - Quanzhou Jinmei Electronic

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2SC1162

Silicon NPN Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon NPN Power Transistors

Product Specification

2SC1162

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA IB=0

V(BR)CBO Collector-base breakdown voltage

IC=1mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=1mA; IC=0

VCEsat Collector-emitter saturation voltage IC=2.0A; IB=0.2A(Pulse test)

VBE

Base-emitter on voltage

IC=1.5A ; VCE=2V(Pulse test)

ICBO

Collector cut-off current

VCB=35V; IE=0

IEBO

Emitter cut-off current

VEB=3V; IC=0

hFE-1

DC current gain

IC=0.5A ; VCE=2V

hFE-2

DC current gain

IC=1.5A ; VCE=2V(Pulse test)

fT

Transition frequency

IC=0.2A ; VCE=2V(Pulse test)

‹ hFE-1 Classifications

B

C

D

60-120 100-200 160-320

MIN TYP. MAX UNIT

35

V

35

V

5

V

1.0

V

1.5

V

20 μA

1

μA

60

320

20

180

MHz

2

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