2SC1384G-R-T92-T(2016) 查看數據表（PDF） - Unisonic Technologies

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2SC1384G-R-T92-T
(Rev.:2016)

NPN SILICON TRANSISTOR

Unisonic Technologies 

2SC1384

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATINGS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

5

V

Peak Collector Current

ICP

1.5

A

Collector Current (DC)

IC

1

A

Collector Dissipation (TA=25C)

SOT-89

TO-92/TO-92NL

PC

500

mW

1000

mW

Junction Temperature

TJ

125

C

Operating Temperature

TOPR

-20 ~ +85

C

Storage Temperature

TSTG

-40 ~ +150

C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25C, unless otherwise specified)

PARAMETER

SYMBOL

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Current Gain Bandwidth Product

Output Capacitance

BVCBO

BVCEO

BVEBO

ICBO

hFE1

hFE2

VCE(SAT)

VBE(SAT)

fT

COB

 CLASSIFICATION OF hFE

TEST CONDITIONS

IC=10A, IE=0

IC=2mA, IB=0

IE=10A, IC=0

VCB=20V, IE=0

VCE=10V, IC=500mA

VCE=5V, IC=1A

IC=0.5A, IB=50mA

IC=0.5A, IB=50mA

VCE=10V, IB=50mA

VCB=10V, IE=0, f=1MHz

MIN TYP MAX UNIT

60

V

50

V

5

V

0.1 A

85 160 340

50 100

0.2 0.4 V

0.85 1.2 V

200

MHz

11 20 pF

RANK

RANGE

Q

85-170

R

120-240

S

170-340

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R211-005.F

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