SPA16N50C3(2007) 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

SPA16N50C3
(Rev.:2007)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP16N50C3

SPI16N50C3, SPA16N50C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

VDS @ Tjmax 560 V

RDS(on)

0.28 Ω

ID

16 A

• Periodic avalanche rated

PG-TO220FP PG-TO262

PG-TO220

• Extreme dv/dt rated

2

• Ultra low effective capacitances

• Improved transconductance

3

12

P-TO220-3-31

P-TO220-3-1

23

1

• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type

SPP16N50C3

SPI16N50C3

SPA16N50C3

Package

PG-TO220

PG-TO262

PG-TO220FP

Ordering Code

Q67040-S4583

Q67040-S4582

SP000216351

Marking

16N50C3

16N50C3

16N50C3

Maximum Ratings

Parameter

Continuous drain current

TC = 25 °C

TC = 100 °C

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse

ID=8, VDD=50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=16A, VDD=50V

Avalanche current, repetitive tAR limited by Tjmax

Gate source voltage

Gate source voltage AC (f >1Hz)

Power dissipation, TC = 25°C

Operating and storage temperature

Reverse diode dv/dt 6)

Symbol

ID

ID puls

EAS

EAR

IAR

VGS

VGS

Ptot

Tj , Tstg

dv/dt

Value

SPP_I

SPA

16

161)

10

101)

48

48

460

460

0.64

0.64

16

16

±20

±20

±30

±30

160

34

-55...+150

15

Unit

A

A

mJ

A

V

W

°C

V/ns

Rev. 3.0

Page 1

2007-08-30

Share Link: