SPA16N50C3(2007) 查看數據表（PDF） - Infineon Technologies

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SPA16N50C3
(Rev.:2007)

Cool MOS™ Power Transistor

Infineon Technologies 

SPP16N50C3

SPI16N50C3, SPA16N50C3

9 Typ. drain-source on resistance

RDS(on)=f(ID)

parameter: Tj=150°C, VGS

2

Ω 4V 4.5V

5V

6V

10 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 10 A, VGS = 10 V

SPP16N50C3

1.6

Ω

1.2

1.2

1

8V

20V

0.8

0.8

0.6

0.4

98%

0.4

typ

0.2

0

0

5

10

15

20

A

30

ID

0

-60 -20 20

60 100 °C

180

Tj

11 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: tp = 10 µs

60

A

50

Tj = 25°C

45

40

35

30

Tj = 150°C

25

20

12 Typ. gate charge

VGS = f (QGate)

parameter: ID = 16 A pulsed

SPP16N50C3

16

V

12

10

0,2 VDS max

0,8 VDS max

8

6

15

4

10

5

0

0 1 2 3 4 5 6 7 8 V 10

VGS

2

0

0 10 20 30 40 50 60 70 80 nC 100

QGate

Rev. 3.0

Page 7

2007-08-30

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