13N80K5 查看數據表（PDF） - STMicroelectronics

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13N80K5

N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package

STMicroelectronics 

STFI13N80K5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VGS

ID

ID

IDM (2)

PTOT

IAR

EAS

Viso

dv/dt (3)

dv/dt(4)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Max current during repetitive or single pulse

avalanche (pulse width limited by Tjmax)

Single pulse avalanche energy

(starting TJ = 25 °C, ID=IAS, VDD= 50 V)

Insulation withstand voltage (RMS) from all three

leads to external heat sink

(t=1 s; TC=25 °C)

Peak diode recovery voltage slope

MOSFET dv/dt ruggedness

Tj

Operating junction temperature

Tstg

Storage temperature

1. Limited by package.

2. Pulse width limited by safe operating area.

3. ISD ≤ 12 A, di/dt ≤ 100 A/µs, VPeak ≤ V(BR)DSS

4. VDS ≤ 640 V

± 30

12(1)

7.6(1)

48(1)

35

4

148

2500

4.5

50

-55 to 150

Unit

V

A

A

A

W

A

mJ

V

V/ns

V/ns

°C

Symbol

Rthj-case

Rthj-amb

Table 3. Thermal data

Parameter

Thermal resistance junction-case max

Thermal resistance junction-amb max

Value

3.57

62.5

Unit

°C/W

DocID027200 Rev 2

3/13

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