13N80K5 查看數據表（PDF） - STMicroelectronics

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13N80K5

N-channel 800 V, 0.37 Ω typ.,12 A MDmesh™ K5 Power MOSFET in an I²PAKFP package

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Symbol

Parameter

Table 4. On/off states

Test conditions

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current

IGSS

VGS(th)

RDS(on)

Gate body leakage current

Gate threshold voltage

Static drain-source

on-resistance

VGS= 0, ID = 1 mA

VGS = 0, VDS = 800 V

VGS = 0, VDS = 800 V,

Tc=125 °C

VDS = 0, VGS = ± 20 V

VDS = VGS, ID = 100 µA

VGS = 10 V, ID= 6 A

STFI13N80K5

Min. Typ. Max. Unit

800

V

1 µA

50 µA

±10 µA

3

4

5

V

0.37 0.45 Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

- 870 - pF

VDS =100 V, f=1 MHz, VGS=0 -

50

-

pF

-

2

- pF

Co(tr)(1)

Co(er)(2)

Equivalent capacitance time

related

Equivalent capacitance

energy related

VGS = 0, VDS = 0 to 640 V

- 110 - pF

-

43

-

pF

RG Intrinsic gate resistance

f = 1MHz, ID=0

-

5

-

Ω

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD = 640 V, ID = 12 A

VGS =10 V

(see Figure 16)

-

29

-

nC

-

7

- nC

-

18

-

nC

1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

4/13

DocID027200 Rev 2

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