MRFE6VP8600HR6 查看數據表（PDF） - Freescale Semiconductor

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MRFE6VP8600HR6

RF Power LDMOS Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Unit

Typical DVB--T (8k OFDM) Performance (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz,

DVB--T (8k OFDM) Single Channel.

Output Peak--to--Average Ratio @ 0.01% Probability on CCDF,

Pout = 125 W Avg.

PAR

—

7.8

—

dB

Load Mismatch

VSWR >65:1 at all Phase Angles, 3 dB Overdrive from

Rated Pout (240 W Avg.)

Ψ

No Degradation in Output Power

RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

3

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