MRFE6VP8600HR6 查看數據表（PDF） - Freescale Semiconductor
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MRFE6VP8600HR6 Datasheet PDF : 20 Pages
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TYPICAL CHARACTERISTICS — 860 MHz
1.06
1.05
1.04 1400 mA
1.03
IDS(Q) = 100 mA
VDD = 50 Vdc
1.02 1900 mA
1.01
2400 mA
1
0.99
0.98
0.97
0.96
0.95
0.94
--50
--25
0
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 4. Normalized VGS Quiescent versus
Case Temperature
10
9
VDD = 50 Vdc
8
40 Vdc
30 Vdc
7
20 Vdc
6
10 Vdc
5
4
3
2
1
0
2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3 3.1 3.2 3.3
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Note: Measured with both sides of the transistor tied together.
Figure 5. Drain Current versus Gate--Source Voltage
1000
Measured with ±30 mV(rms)ac @ 1 MHz
VGS = 0 Vdc
100
Coss
10
Crss
1
0
10
20
30
40
50
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Note: Each side of device measured separately.
Figure 6. Capacitance versus Drain--Source Voltage
64
P3dB = 59.0 dBm (794 W) Ideal
62
P2dB = 58.8 dBm (759 W)
60
P1dB = 58.4 dBm (692 W)
58
Actual
56
54
52
VDD = 50 Vdc, IDQ = 1400 mA, f = 860 MHz
Pulse Width = 100 μsec, Duty Cycle = 10%
50
32 33 34 35 36 37 38 39 40 41 42 43
Pin, INPUT POWER (dBm)
Figure 7. Pulsed CW Output Power versus
Input Power
22
60
VDD = 50 Vdc, IDQ = 1400 mA
21
f = 860 MHz
Pulse Width = 100 μsec
50
Duty Cycle = 10%
20
Gps
40
19
30
ηD
18
20
17
10
16
0
10
100
1000
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5
6
RF Device Data
Freescale Semiconductor
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