MRFE6VP8600HR6 查看數據表（PDF） - Freescale Semiconductor

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MRFE6VP8600HR6

RF Power LDMOS Transistors

Freescale Semiconductor 

470--860 MHz REFERENCE CIRCUIT

VDD = 50 Volts, IDQ = 1400 mA, Channel Bandwidth = 8 MHz, Input

Signal PAR = 9.5 dB @ 0.01% Probability on CCDF, TC = 50°C.

Signal Type

Output

IMD

Pout

f

Gps

ηD

PAR Shoulder

(W) (MHz) (dB) (%) (dB)

(dBc)

DVB--T (8k OFDM) 125 Avg. 470 19.0 27.2

8.2

--31.1

650 20.3 30.6

7.6

--30.3

860 19.0 27.9

7.7

--30.4

R1

C1 C2

L1

C17

C16

C18

C19

COAX1

C3

C4 C5

C12*

C6

C8 C10

C6

C7

C9* C11*

COAX3

C20

C22*

C31

C21*

C33*

C23* C25*

C28*

C27*

C34 C32

C24*

C26*

C29* C30*

COAX2

MRFE6VP8600H

Rev. 1

C13 C14

L2

C15 Q1

R2

C35

C36

COAX4

C39

C40

C37

C38

*C9, C11, C12, C21, C22, C23, C24, C25, C26, C27, C28, C29, C30 and C33 are mounted vertically.

Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470--860 MHz

RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

9

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