BC636(2008) 查看數據表（PDF） - NXP Semiconductors.

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BC636
(Rev.:2008)

45 V, 1 A PNP medium power transistors

NXP Semiconductors. 

BC636; BCP51; BCX51

45 V, 1 A PNP medium power transistors

Rev. 08 — 22 February 2008

Product data sheet

1. Product profile

1.1 General description

PNP medium power transistor series.

Table 1. Product overview

Type number[1]

Package

NXP

BC636[2]

SOT54

BCP51

SOT223

BCX51

SOT89

JEITA

SC-43A

SC-73

SC-62

JEDEC

TO-92

-

TO-243

[1] Valid for all available selection groups.

[2] Also available in SOT54A and SOT54 variant packages (see Section 2).

NPN complement

BC635

BCP54

BCX54

1.2 Features

I High current

I Two current gain selections

I High power dissipation capability

1.3 Applications

I Linear voltage regulators

I High-side switches

I MOSFET drivers

I Amplifiers

1.4 Quick reference data

Table 2.

Symbol

VCEO

IC

ICM

hFE

Quick reference data

Parameter

Conditions

collector-emitter voltage open base

collector current

peak collector current

DC current gain

hFE selection -10

hFE selection -16

single pulse; tp ≤ 1 ms

VCE = −2 V;

IC = −150 mA

VCE = −2 V;

IC = −150 mA

VCE = −2 V;

IC = −150 mA

Min Typ Max Unit

-

-

−45 V

-

-

−1 A

-

-

−1.5 A

63 -

250

63 -

160

100 -

250

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