BC636(2008) 查看數據表（PDF） - NXP Semiconductors.

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BC636
(Rev.:2008)

45 V, 1 A PNP medium power transistors

NXP Semiconductors. 

NXP Semiconductors

BC636; BCP51; BCX51

45 V, 1 A PNP medium power transistors

5. Limiting values

Table 6. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

VCBO

VCEO

VEBO

IC

ICM

IBM

Ptot

collector-base voltage

open emitter

-

collector-emitter voltage

open base

-

emitter-base voltage

open collector

-

collector current

-

peak collector current

single pulse;

-

tp ≤ 1 ms

peak base current

single pulse;

-

tp ≤ 1 ms

total power dissipation

Tamb ≤ 25 °C

BC636

[1] -

BCP51

[1] -

[2] -

BCX51

[1] -

[2] -

[3] -

Tj

junction temperature

-

Tamb

ambient temperature

−65

Tstg

storage temperature

−65

Max Unit

−45

V

−45

V

−5

V

−1

A

−1.5 A

−0.2 A

0.83 W

0.65 W

1

W

0.5

W

0.9

W

1.3

W

150

°C

+150 °C

+150 °C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.

BC636_BCP51_BCX51_8

Product data sheet

Rev. 08 — 22 February 2008

© NXP B.V. 2008. All rights reserved.

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