BAP64-05W,115 查看數據表（PDF） - NXP Semiconductors.
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BAP64-05W,115 Datasheet PDF : 11 Pages
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NXP Semiconductors
7 Characteristics
Table 7. Characteristics
Values are specified per diode; Tj = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
VF
forward voltage
IF = 50 mA
IR
reverse current
VR = 60 V
VR = 20 V
Cd
diode capacitance
see Figure 1; f = 1 MHz;
VR = 0 V
VR = 1 V
VR = 20 V
rD
diode forward resistance see Figure 2; f = 100 MHz;
IF = 0.5 mA
IF = 1 mA
IF = 10 mA
IF = 100 mA
τL
charge carrier life time when switched from IF = 10 mA to
IR = 6 mA; RL = 100 Ω; measured at
IR = 3 mA
LS
series inductance
[1] Guaranteed on AQL basis: inspection level S4, AQL 1.0.
BAP64-05W
Silicon PIN diode
Min Typ Max Unit
-
0.95 1.1
V
-
-
10
µA
-
-
1
µA
-
0.52 -
pF
-
0.37 -
pF
-
0.23 0.35 pF
[1]
-
20
40
Ω
-
10
20
Ω
-
2.0
3.8
Ω
-
0.7
1.35 Ω
-
1.55 -
µs
-
1.2
-
nH
BAP64-05W
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3.2 — 1 February 2019
© NXP B.V. 2019. All rights reserved.
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