DLPT05W(2012) 查看數據表（PDF） - Diodes Incorporated.
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DLPT05W Datasheet PDF : 5 Pages
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DLPT05W
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Peak Pulse Power (tp = 8x20µs, per Figure 2 )
PPK
300
W
Peak Forward Voltage (IPP = 1A, tp = 8x20µs, per Figure 2)
VFP
2.1
V
Diode Peak Repetitive Reverse Voltage
VRRM
75
V
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
RθJA
TJ, TSTG
Value
625
-55 to +150
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Reverse
Standoff
Voltage
VRWM (V)
5
Breakdown Voltage
VBR @ IT
Min (V) Max (V)
6.0
⎯
Test
Current
IT (mA)
1.0
Max. Reverse
Leakage @ VRWM
(Note 6)
IR (μA)
20
Max. Clamping
Voltage @ Ipp = 1A
(Notes 7 & 8)
VC (V)
9.8
Max. Peak Pulse
Current
(Notes 7 & 8)
Ipp(A)
17
Typical Total
Capacitance
(Note 9)
(pF)
1.9
Notes:
5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20μs peak pulse current (Ipp) waveform.
8. Measured from line to be protected to ground pin.
9. VR = 0V, f = 1MHz from line to be protected to ground pin.
100
75
50
25
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Pulse Derating Curve
t, TIME (µs)
Figure 2. Pulse Waveform
DLPT05W
Document number: DS35592 Rev. 3 - 2
2 of 5
www.diodes.com
June 2012
© Diodes Incorporated
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