KSC5338D(2000) 查看數據表（PDF） - Fairchild Semiconductor
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KSC5338D Datasheet PDF : 8 Pages
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KSC5338D/KSC5338DW
High Voltage Power Switch Switching
Application
• Wide Safe Operating Area
• Built-in Free-Wheeling Diode
• Suitable for Electronic Ballast Application
• Small Variance in Storage Time
• Two Package Choices : TO-220 or D2-PAK
Equivalent Circuit
C
B
D2-PAK
1
TO-220
E
1
1.Base 2.Collector 3.Emitter
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current (DC)
IBP
*Base Current (Pulse)
PC
Power Dissipation(TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* Pulse Test : Pulse Width = 5ms, Duty Cycle ≤ 10%
Value
1000
450
12
5
10
2
4
75
150
- 55 ~ 150
Units
V
V
V
A
A
A
A
W
°C
°C
Thermal Characteristics TC=25°C unless otherwise noted
Symbol
Characteristics
Rθjc
Thermal Resistance
Junction to Case
Rθja
Junction to Ambient
TL
Maximun Lead Temperature for Soldering
Rating
1.65
62.5
270
Unit
°C/W
°C
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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