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NCL30082ADMR2G(2013) 查看數據表(PDF) - ON Semiconductor

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NCL30082ADMR2G Datasheet PDF : 32 Pages
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NCL30082
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V;
For min/max values TJ = 40°C to +125°C, Max TJ = 150°C, VCC = 12 V)
Description
Test Condition
Symbol
Min Typ
STARTUP AND SUPPLY CIRCUITS
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Hysteresis VCC(on) – VCC(off)
Internal logic reset
Over Voltage Protection
VCC OVP threshold
VCC increasing
VCC decreasing
VCC decreasing
VCC(on)
VCC(off)
VCC(HYS)
VCC(reset)
VCC(OVP)
16
18
8.2 8.8
8
3.5 4.5
26
28
VCC(off) noise filter
VCC(reset) noise filter
Startup current
Startup current in fault mode
Supply Current
Device Disabled/Fault
Device Enabled/No output load on pin 5
Device Switching (Fsw = 65 kHz)
VCC > VCC(off)
Fsw = 65 kHz
CDRV = 470 pF,
Fsw = 65 kHz
tVCC(off)
tVCC(reset)
ICC(start)
ICC(sFault)
ICC1
ICC2
ICC3
5
20
13
46
0.8 1.2
2.3
2.7
CURRENT SENSE
Maximum Internal current limit
Leading Edge Blanking Duration for VILIM
(Tj = 25°C to 125°C)
VILIM
tLEB
0.95
1
250 300
Leading Edge Blanking Duration for VILIM
(Tj = 40°C to 125°C)
tLEB
240 300
Input Bias Current
Propagation delay from current detection to gate offstate
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for VCS(stop)
Blanking time for CS to GND short detection VpinVIN = 1 V
Blanking time for CS to GND short detection VpinVIN = 3.3 V
GATE DRIVE
DRV high
Ibias
tILIM
VCS(stop)
tBCS
tCS(blank1)
tCS(blank2)
0.02
50
1.35 1.5
120
6
2
Drive Resistance
DRV Sink
DRV Source
RSNK
RSRC
13
30
Drive current capability
DRV Sink (Note 4)
DRV Source (Note 4)
Rise Time (10% to 90%)
Fall Time (90% to 10%)
DRV Low Voltage
DRV High Voltage
4. Guaranteed by design
5. OTP triggers when RNTC = 4.7 kW
CDRV = 470 pF
CDRV = 470 pF
VCC = VCC(off)+0.2 V
CDRV = 470 pF,
RDRV = 33 kW
VCC = 30 V
CDRV = 470 pF,
RDRV = 33 kW
ISNK
ISRC
tr
tf
VDRV(low)
VDRV(high)
500
300
40
30
8
10
12
Max Unit
V
20
9.4
5.5
30
V
ms
30 mA
60 mA
mA
1.4
4.0
5.0
1.05 V
350 ns
350 ns
mA
150 ns
1.65 V
ns
12
ms
4
ms
W
mA
ns
ns
V
14
V
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