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NCL30082DDR2G 查看數據表(PDF) - ON Semiconductor

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NCL30082DDR2G Datasheet PDF : 35 Pages
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NCL30082
Table 3. ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values TJ = 25°C, VCC = 12 V;
For min/max values TJ = −40°C to +125°C, Max TJ = 150°C, VCC = 12 V)
Description
Test Condition
Symbol
Min Typ
Max Unit
CURRENT SENSE
Maximum Internal current limit
Leading Edge Blanking Duration for VILIM
(Tj = −25°C to 125°C) (Not applicable for NCL30082D)
Leading Edge Blanking Duration for VILIM
(Tj = −40°C to 125°C)
Input Bias Current
Propagation delay from current detection to gate off−state
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for VCS(stop)
Blanking time for CS to GND short detection VpinVIN = 1 V
Blanking time for CS to GND short detection VpinVIN = 1 V
NCL30082D
DRV high
VILIM
tLEB
0.95
1
1.05 V
250 300 350 ns
tLEB
240 300 350 ns
Ibias
0.02
mA
tILIM
50 150 ns
VCS(stop)
1.35 1.5 1.65 V
tBCS
120
ns
tCS(blank1)
6
12
ms
tCS(blank1)D
8
10.7 14
ms
Blanking time for CS to GND short detection VpinVIN = 3.3 V
Blanking time for CS to GND short detection VpinVIN = 3.3 V
NCL30082D
tCS(blank2)
2
4
ms
tCS(blank2)D
2.6
3.6
4.6
ms
GATE DRIVE
Drive Resistance
DRV Sink
DRV Source
Drive current capability
DRV Sink (Note 6)
DRV Source (Note 6)
Rise Time (10% to 90%)
Fall Time (90% to 10%)
DRV Low Voltage
DRV High Voltage
CDRV = 470 pF
CDRV = 470 pF
VCC = VCC(off)+0.2 V
CDRV = 470 pF,
RDRV = 33 kW
VCC = 30 V
CDRV = 470 pF,
RDRV = 33 kW
RSNK
RSRC
ISNK
ISRC
tr
tf
VDRV(low)
VDRV(high)
W
13
30
mA
500
300
40
ns
30
ns
8
V
10
12
14
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Guaranteed by design.
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