HEF4585BP(2009) 查看數據表（PDF） - NXP Semiconductors.
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HEF4585BP Datasheet PDF : 15 Pages
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NXP Semiconductors
HEF4585B
4-bit magnitude comparator
7. Functional description
Table 3. Function selection [1]
Comparing inputs
A3, B3 A2, B2 A1, B1
A3 > B3 X
X
A3 < B3 X
X
A3 = B3 A2 > B2 X
A2 < B2 X
A2 = B2 A1 > B1
A1 < B1
A1 = B1
A0, B0
X
X
X
X
X
X
A0 > B0
A0 < B0
A0 = B0
Cascading inputs
IA>B
IA<B
H
X
X
X
H
X
X
X
H
X
X
X
H
X
X
X
X
L
H
L
X
H
[2]
X
H
L
L
IA=B
X
X
X
X
X
X
X
X
H
L
L
H
L
Outputs
QA>B
H
L
H
L
H
L
H
L
L
H
L
QA<B
L
H
L
H
L
H
L
H
L
L
H
QA=B
L
L
L
L
L
L
L
L
H
L
L
L
H
H
L
L
L
[1] H = HIGH voltage level; L = LOW voltage level; X = don’t care.
[2] The first 11 lines describe the normal operation under all conditions that will occur in a single device or in a serial expansion scheme.
The last 2 lines describe the operation under abnormal conditions on the cascading inputs. These conditions occur when the parallel
expansion technique is used.
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDD
IIK
VI
IOK
II/O
Tstg
Tamb
Ptot
supply voltage
input clamping current
input voltage
output clamping current
input/output current
storage temperature
ambient temperature
total power dissipation
VI < −0.5 V or VI > VDD + 0.5 V
VO < −0.5 V or VO > VDD + 0.5 V
DIP16 package
SO16 package
P
power dissipation
per output
[1] For DIP16 package: Ptot derates linearly with 12 mW/K above 70 °C.
[2] For SO16 package: Ptot derates linearly with 8 mW/K above 70 °C.
Min
−0.5
-
−0.5
-
-
−65
−40
[1] -
[2] -
-
Max
Unit
+18
V
±10
mA
VDD + 0.5
V
±10
mA
±10
mA
+150
°C
+85
°C
750
mW
500
mW
100
mW
HEF4585B_4
Product data sheet
Rev. 04 — 10 August 2009
© NXP B.V. 2009. All rights reserved.
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