11N60C3(2005) 查看數據表（PDF） - Infineon Technologies
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| 11N60C3 Datasheet PDF : 0 Pages | |||
SPP11N60C3
SPI11N60C3, SPA11N60C3
Electrical Characteristics
Parameter
Symbol
Conditions
Transconductance
gfs
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance Crss
Effective output capacitance,5) Co(er)
energy related
Effective output capacitance,6) Co(tr)
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
tr
td(off)
tf
VDS≥2*ID*RDS(on)max,
ID=7A
VGS=0V, VDS=25V,
f=1MHz
VGS=0V,
VDS=0V to 480V
VDD=380V, VGS=0/10V,
ID=11A,
RG=6.8Ω
Values
Unit
min. typ. max.
-
8.3
-S
- 1200 - pF
- 390 -
-
30
-
-
45
-
-
85
-
-
10
- ns
-
5
-
-
44 70
-
5
9
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Qgs
Qgd
VDD=480V, ID=11A
Gate charge total
Qg
VDD=480V, ID=11A,
VGS=0 to 10V
Gate plateau voltage
V(plateau) VDD=480V, ID=11A
-
5.5
- nC
-
22
-
-
45 60
-
5.5
-V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
6Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
7ISD<=ID, di/dt<=400A/us, VDClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.
Rev. 2.6
Page 3
2005-09-21
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