VS-10BQ060TRPBF 查看數據表（PDF） - Vishay Semiconductors
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VS-10BQ060TRPBF Datasheet PDF : 6 Pages
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VS-10BQ060PbF
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum forward voltage drop
See fig. 1
VFM (1)
Maximum reverse leakage current
See fig. 2
IRM (1)
Typical junction capacitance
Typical series inductance
Maximum voltage rate of charge
CT
LS
dV/dt
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
1A
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
TJ = 125 °C
VR = Rated VR
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
Measured lead to lead 5 mm from package body
Rated VR
VALUES
0.6
0.76
0.57
0.69
0.1
5.0
62
2.0
10 000
UNITS
V
mA
pF
nH
V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
TJ (1), TStg
RthJL (2)
DC operation
RthJA
Approximate weight
Marking device
Case style SMB (similar DO-214AA)
Notes
(1) d----P-----t-o---t < ------1-------- thermal runaway condition for a diode on its own heatsink
dTJ RthJA
(2) Mounted 1" square PCB
VALUES
-55 to +150
UNITS
°C
36
°C/W
80
0.10
g
0.003
oz.
V1H
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.1
0.2
0.4
0.6
0.8
1.0
VFM - Forward Voltage Drop (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
1
0.1
0.01
0.001
TJ = 150 °C
TJ = 125 °C
TJ = 100 °C
TJ = 75 °C
TJ = 50 °C
TJ = 25 °C
0.0001
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
Revision: 03-Jun-14
2
Document Number: 94113
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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